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Package Marking and Ordering Information
Part Number
FQA90N15
Top Mark
FQA90N15
Package
TO- 3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 150V, V GS = 0V
V DS = 120V, T C = 150 ° C
V GS = 25V, V DS = 0V
V GS = -25V, V DS = 0V
150
--
--
--
--
--
--
0.15
--
--
--
--
--
--
1
10
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 45A
V DS = 40V, I D = 45A
2.0
--
--
--
0.014
68
4.0
0.018
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
--
--
--
6700
1400
200
8700
1800
260
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 75V, I D = 90A
R G = 25 Ω
V DS = 120V, I D = 90A
V GS = 10V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
105
760
470
410
220
43
110
220
1500
950
830
285
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
90
360
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 90A
V GS = 0V, I S = 90A
dI F /dt =100A/ μ s
--
--
--
--
175
0.97
1.5
--
--
V
ns
μ C
NOTES:
1. Repetitive r ating: p ulse - width limited by maximum junction temperature .
2. L = 0. 29 mH, I AS = 9 0 A, V DD = 25 V, R G = 25 Ω , s tarting T J = 25 ° C .
3. I SD ≤ 9 0 A, di/dt ≤ 3 00 A/ μ s, V DD ≤ BV DSS , s tarting T J = 25 ° C .
4. Essentially i ndependent of o perating t emperature t ypical c haracteristics .
?2006 Fairchild Semiconductor Corporation
FQA90N15 Rev C1
2
www.fairchildsemi.com
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